Self-assembly of SiO2 nanowires and Si microwires into hierarchical heterostructures on a large scale

被引:100
|
作者
Hu, JQ
Bando, Y
Zhan, JH
Yuan, XL
Sekiguchi, T
Golberg, D
机构
[1] ICYS, NIMS, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[3] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1002/adma.200401789
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel hierarchical heterostructures made of Si core microwires covered by dense, aligned SiO2 nanowires that form multiple junctions to the cores, have been synthesized on a large scale (see Figure). The Si wires are single crystals with a diameter of similar to 1-3 mu m, whereas the SiO2 nanowires are amorphous with a diameter of similar to 30-80 nm. The materials are envisaged as becoming important for optical fibers, low-dimensional waveguides, scanning near-field optical microscopes, and high-bandwidth optical signal processing devices.
引用
收藏
页码:971 / +
页数:6
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