Colloidal Synthesis of Monodisperse Semiconductor Nanocrystals through Saturated Ionic Layer Adsorption

被引:13
作者
Razgoniaeva, Natalia [1 ,2 ]
Carrillo, Luis [4 ]
Burchfield, Douglas [1 ,3 ]
Moroz, Pavel [1 ,2 ]
Adhikari, Prakash [2 ]
Yadav, Priyanka [2 ]
Khon, Dmitriy [4 ]
Zamkov, Mikhail [1 ,2 ]
机构
[1] Bowling Green State Univ, Ctr Photochem Sci, Bowling Green, OH 43403 USA
[2] Bowling Green State Univ, Dept Phys, Bowling Green, OH 43403 USA
[3] Bowling Green State Univ, Dept Chem, Bowling Green, OH 43403 USA
[4] St Marys Univ, Dept Chem & Biochem, San Antonio, TX 78228 USA
基金
美国国家科学基金会;
关键词
QUANTUM DOTS; CDSE NANOCRYSTALS; EXTINCTION COEFFICIENT; AUGER RECOMBINATION; LIGAND-EXCHANGE; SCALE SYNTHESIS; II-VI; SIZE; SURFACE; PHOTOLUMINESCENCE;
D O I
10.1021/acs.chemmater.6b00772
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate a general strategy for the synthesis of colloidal semiconductor nanocrystals (NCs) exhibiting size dispersion below 5%. The present approach relies on the sequential deposition of fully saturated cationic and anionic monolayers onto small-diameter clusters, which leads to focusing of nanocrystal sizes with the increasing particle diameter. Each ionic layer is grown through a room-temperature colloidal atomic layer deposition process that employs a two-solvent mixture to separate the precursor and nanocrystal phases. As a result, unreacted precursors can be removed after each deposition cycle, preventing the secondary nucleation. By using CdS NCs as a model system, we demonstrate that a narrow size dispersion can be achieved through a sequential growth of Cd2+ and S2- layers onto starting CdS cluster "seeds". Besides shape uniformity, the demonstrated methodology offers an excellent batch-to-batch reproducibility and an improved control over the nanocrystal surface composition. The present synthesis is amenable to other types of semiconductor nanocrystals and can potentially offer a viable alternative to traditional hot-injection strategies of the nanoparticle growth.
引用
收藏
页码:2823 / 2833
页数:11
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