Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films

被引：20
作者：
Lee, Kyu Hyoung
Ishizaki, Akihiro
Kim, Sung Wng
Ohta, Hiromichi
Koumoto, Kunihito [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[2] CREST, Japan Sci & Technol Agcy, Kawaguchi 3320012, Japan
[3] CREST, Japan Sci & Technol Agcy, Kawaguchi 3320012, Japan
[4] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 03期
关键词：
D O I：
10.1063/1.2764221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the epitaxial film growth, by pulsed laser deposition, of c-axis-oriented Nb-doped SrO(SrTiO3)(1) films having a K2NiF4-type structure and their thermoelectric properties over a wide temperature range, from 20 to 800 K. High-resolution x-ray diffraction and reflection high energy electron diffraction patterns revealed that the films were grown heteroepitaxially on the (001) face of the LaAlO3 substrate. The thermoelectric properties of the Nb-doped SrO(SrTiO3)(1) epitaxial films were improved in terms of power factor compared to those for polycrystalline Nb-doped SrO(SrTiO3)(1). A theoretical analysis of the transport parameters revealed that the intrinsic transport occurred predominantly in the SrTiO3 layers. (c) 2007 American Institute of Physics.
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