Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates

被引：1

作者：

Lu, Xiangmeng ^{[1
]}

Kumagai, Naoto ^{[1
,2
]}

Minami, Yasuo ^{[1
]}

Kitada, Takahiro ^{[1
]}

Isu, Toshiro ^{[1
]}

机构：

[1] Tokushima Univ, Grad Sch Sci & Technol, Tokushima 7708506, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058560, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 477卷

关键词：

Molecular beam epitaxy; Quantum dot; (113)B GaAs; Sb-soak; LASER;

D O I：

10.1016/j.jcrysgro.2017.01.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the effects of Sb-soak on InAs quantum dots (QDs) grown on (001) and (113)B GaAs substrates by molecular beam epitaxy. Surface morphologies of the QDs were characterized by atomic force microscopy. The optical properties of buried QDs were investigated by photoluminescence (PL). We showed that effects of Sb-soak on density and PL of (001) and (113)B QDs were quite different. The increased density and blue-shift of (001) QDs can be explained by the surfactant effect of Sb atoms which increase the areal density of the kinks for nucleation. On the other hand, for (113)B QDs, the incorporation effect should be responsible for the red-shift because the Sb atoms may be diffused into QDs. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：221 / 224

页数：4

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