STRUCTURAL EVOLUTION OF SPUTTERED INDIUM OXIDE THIN FILMS

被引：15

作者：

Hotovy, Ivan ^{[1
]}

Kups, Thomas ^{[2
]}

Hotovy, Juraj ^{[1
]}

Liday, Jozef

Buc, Dalibor

Caplovicova, Maria ^{[2
,4
]}

Rehacek, Vlastimil

Sitter, Helmut ^{[3
]}

Simbrunner, Clemens ^{[3
]}

Bonnani, Alberta ^{[3
]}

Spiess, Lothar ^{[2
]}

机构：

[1] Slovak Tech Univ Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[2] Tech Univ Ilmenau, FG Werkstoffe Elektrotech, Inst Werkstofftech, D-98684 Ilmenau, Germany

[3] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[4] Comenius Univ, Dept Geol Mineral Deposits, Bratislava 84215, Slovakia

来源：

JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2010年 / 61卷 / 06期

关键词：

In(2)O(3) thin films; de magnetron sputtering; structure; cubic indium oxide; rhombohedral indium oxide; GROWTH;

D O I：

10.2478/v10187-010-0059-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The indium oxide thin films were deposited at room temperature by reactive magnetron sputtering in the mixture of oxygen and argon on silicon and oxidized silicon substrates. The influence of the oxygen flow in the reactive mixture and post-deposition annealing on the structural properties were investigated. The as deposited In(2)O(3) films showed a dominating randomly oriented nanocrystalline structure of cubic In(2)O(3). The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films.

引用

页码：382 / 385

页数：4

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