Investigation of chemical mechanical polishing of zinc oxide thin films

被引:17
作者
Gupta, Sushant [1 ]
Kumar, Purushottam [2 ]
Chakkaravathi, A. Arul [2 ]
Craciun, Doina [3 ]
Singh, Rajiv K. [1 ]
机构
[1] Univ Florida, Dept Mat Sci, Gainesville, FL 32611 USA
[2] Sinmat Inc, Gainesville, FL 32641 USA
[3] Natl Inst Laser Plasma & Radiat Phys, Bucharest, Romania
关键词
Transparent conducting oxide; Zinc oxide; Chemical mechanical polishing; Thin films; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; SOLAR-CELLS; ZNO FILMS; SAPPHIRE; GAN; LAYERS; MICROSTRUCTURE; PERFORMANCES; DEPOSITION;
D O I
10.1016/j.apsusc.2011.01.116
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness < 6 angstrom (as compared to the initial roughness of 26 +/- 6 angstrom) were obtained under optimized conditions with removal rates as high as 670 angstrom/min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:5837 / 5843
页数:7
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