One-dimensional germanium nanostructures-formation and their electron field emission properties

被引：15

作者：

Wu, Hung-Chi ^{[1
]}

Hou, Te-Chien ^{[1
]}

Chueh, Yu-Lun ^{[1
]}

Chen, Lih-Juann ^{[1
]}

Chiu, Hsin-Tien ^{[2
]}

Lee, Chi-Young ^{[1
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 30013, Taiwan

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 45期

关键词：

ZINC-OXIDE NANOWIRES; SEMICONDUCTING NANOWIRES; ASSISTED GROWTH; SILICON; SI; EVAPORATION; TRANSISTORS;

D O I：

10.1088/0957-4484/21/45/455601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V mu m(-1) and field enhancement factor of 1242.

引用

页数：5

共 41 条

[1] Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors [J].

Ahn, Y ;

Dunning, J ;

Park, J .

NANO LETTERS, 2005, 5 (07) :1367-1370

[2] Efficient visible light detection using individual germanium nanowire field effect transistors [J].

Ahn, Y. H. ;

Park, Jiwoong .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[3] Template assisted electrodeposition of germanium and silicon nanowires in an ionic liquid [J].

Al-Salman, R. ;

Mallet, J. ;

Molinari, M. ;

Fricoteaux, P. ;

Martineau, F. ;

Troyon, M. ;

El Abedin, S. Zein ;

Endres, F. .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2008, 10 (41) :6233-6237

[4] Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires [J].

Andzane, Jana ;

Petkov, Nikolay ;

Livshits, Aleksandrs I. ;

Boland, John J. ;

Holmes, Justin D. ;

Erts, Donats .

NANO LETTERS, 2009, 9 (05) :1824-1829

[5] Logic circuits with carbon nanotube transistors [J].

Bachtold, A ;

Hadley, P ;

Nakanishi, T ;

Dekker, C .

SCIENCE, 2001, 294 (5545) :1317-1320

[6] Nitrogen-doped tungsten oxide nanowires: Low-temperature synthesis on Si, and electrical, optical, and field-emission properties [J].

Chang, Mu-Tung ;

Chou, Li-Jen ;

Chueh, Yu-Lun ;

Lee, Yu-Chen ;

Hsieh, Chin-Hua ;

Chen, Chii-Dong ;

Lan, Yann-Wen ;

Chen, Lih-Juann .

SMALL, 2007, 3 (04) :658-664

[7] Morphological stability of a nanowire during growth process [J].

Chen, XL ;

Li, JY ;

Lan, YC ;

Cao, YG .

MODERN PHYSICS LETTERS B, 2001, 15 (01) :27-31

[8] Bulk-quantity synthesis and self-catalytic VLS growth of SnO2 nanowires by lower-temperature evaporation [J].

Chen, YQ ;

Cui, XF ;

Zhang, K ;

Pan, DY ;

Zhang, SY ;

Wang, B ;

Hou, JG .

CHEMICAL PHYSICS LETTERS, 2003, 369 (1-2) :16-20

[9] Seeded germanium nanowire synthesis in solution [J].

Chockla, Aaron M. ;

Korgel, Brian A. .

JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (07) :996-1001

[10] Synthesis of taperlike Si nanowires with strong field emission [J].

Chueh, YL ;

Chou, LJ ;

Cheng, SL ;

He, JH ;

Wu, WW ;

Chen, LJ .

APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3

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