Molecular nitrogen implanted in Al2O3 by low energy N2+ ion bombardment

被引:8
作者
Holgado, JP
Yubero, F
Cordón, A
Gracia, F
González-Elipe, AR
Avila, J
机构
[1] Univ Seville, CSIC, Inst Ciencia Mat Sevilla, E-41092 Seville, Spain
[2] Dpt Q Inorgan, E-41092 Seville, Spain
[3] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
[4] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France
关键词
electronic band structured; electronic states (localized); photoelectron spectroscopies; synchrotron radiation;
D O I
10.1016/j.ssc.2003.08.016
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Alumina subjected to low energy (similar to0.5 keV) N-2(+) ion bombardment stabilizes diatomic nitrogen within its matrix. This is confirmed by near edge X-ray absorption spectra of the N K threshold for the implanted nitrogen species that reveals the typical vibrational structure (with the same vibrational spacing) of molecular gaseous di-nitrogen. The analysis of the N KLL resonant Auger emission spectra of the nitrogen implanted alumina samples is characterized by similar features as those found for N-2 in the gas phase. This reaffirms that the incorporated nitrogen in alumina by low energy ion bombardment is in molecular form. The use of resonant Auger spectroscopy is proposed as a general tool to ascertain the formation of di-nitrogen in implanted phases when the photon bandwidth at the N K edge is not narrow enough to resolve the corresponding vibrational structure by X-ray absorption spectroscopy. (C) 2003 Published by Elsevier Ltd.
引用
收藏
页码:235 / 238
页数:4
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