Growth, structure and thermal stability of quasicrystalline Al-Pd-Mn-Ga thin films

被引:6
作者
Bohra, Murtaza [1 ,2 ,3 ]
Pavan, T. M. [1 ]
Fournee, V. [2 ,3 ]
Mandal, R. K. [4 ]
机构
[1] Mahindra Ecole Cent, Coll Engn, Survey 62-1A, Hyderabad 500043, Telangana, India
[2] CNRS, Inst Jean Lamour, UMR 7198, Campus ARTEM,2 Alle Andre Guinier,BP 50840, F-54011 Nancy, France
[3] Univ Lorraine, Campus ARTEM,2 Alle Andre Guinier,BP 50840, F-54011 Nancy, France
[4] Banaras Hindu Univ, Indian Inst Technol, Dept Met Engn, Varanasi 221005, Uttar Pradesh, India
关键词
Quasicrystalline thin films; Al-Pd-Mn-Ga compound; Surface properties; Sputtering; Annealing; PHASE;
D O I
10.1016/j.apsusc.2019.144494
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Growth of Al-Pd-Mn-Ga quasicrystalline thin film is hindered by the low melting temperature of Ga (30 degrees C) and the formation of residual binary phases. In this study, a stable icosahedral film with a composition near Al67.5Pd19Mn7.5Ga5.7 has been achieved using the co-sputtering of Al64.9Pd20.7Mn8.4Ga6 and Al materials followed by ex-situ annealing. The increase in the 6d lattice parameter from 6.45 to 6.48 angstrom of icosahedral phases suggested that Ga (+1) successfully replaced Al(+3) in the composition. The temperature-dependent XRD study (from RT to 700 degrees C) reveals that the icosahedral phase found only in a narrow temperature window of 350-450 degrees C. Interestingly, Al63Pd18Mn7.5Ga6 quasicrystalline thin film exhibits cluster spin glass behaviour due to spin-spin interaction of localized Mn ions. These stable icosahedral thin films with crack-free well-defined surfaces can be useful for potential surface-related applications.
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页数:4
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