Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

被引：23

作者：

Hakkarainen, T. V. ^{[1
]}

Tommila, J. ^{[1
]}

Schramm, A. ^{[1
]}

Tukiainen, A. ^{[1
]}

Ahorinta, R. ^{[1
]}

Dumitrescu, M. ^{[1
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 17期

关键词：

OVERGROWTH; POLARIZATION; EVOLUTION;

D O I：

10.1063/1.3506903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use large-scale UV nanoimprint lithography prepatterned GaAs substrates for site-controlled growth of InAs quantum dot chains by molecular beam epitaxy. We demonstrate simultaneous fabrication of quantum dot chains with high optical quality along four different crystal orientations, [011], [01 (1) over bar], [010], and [001]. We show that the [01 (1) over bar], [010], and [001]-oriented quantum dot chains not only have similar morphology but also experience similar in-plane optical anisotropy, which tends to align along the axis of the quantum dot chain. Our optical and structural results show that InAs quantum dot chains could be a potential platform for nanophotonic waveguiding and integrated circuits. (C) 2010 American Institute of Physics. [doi:10.1063/1.3506903]

引用

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