A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability

被引：55

作者：

Mori, Mutsuhiro ^{[1
]}

Oyama, Kazuhiro

Kohno, Yasuhiko

Sakano, Junichi

Uruno, Junpei

Ishizaka, Katsuo

Kawase, Daisuke

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Ibaraki 3191292, Japan

[2] Renesas Technol Corp, Multi Purpose Semicond Device Business Unit, Gunma 3700021, Japan

[3] Hitachi Ltd, Power Syst, Ibaraki 3191292, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期

关键词：

collector-emitter saturation voltage; insulated gate bipolar transistor (IGBT); short-circuit capability;

D O I：

10.1109/TED.2007.900007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 A/cm(2) and a tough short-circuit capability of more than 10 mu s. The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50 % lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.

引用

页码：2011 / 2016

页数：6

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