P-type polycrystalline silicon seed layer fabrication using RF-PECVD for thin film solar cells

被引：3
作者：
Chhetri, Nikita [1 ,3 ]
Das, Gaurab [2 ]
Kole, Arindam [2 ]
Saha, Hiranmay [2 ]
Haldar, Sripada [3 ]
Chatterjee, Somenath [1 ]
机构：
[1] Sikkim Manipal Univ, Sikkim Manipal Inst Technol, Ctr Mat Sci & Nanotechnol, Gangtok 737136, Sikkim, India
[2] Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, West Bengal, India
[3] Univ North Bengal, Dept Phys, Darjeeling 734134, West Bengal, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2022年 / 58卷
关键词：
AIC; Polycrystalline silicon; SEM; XRD; ALUMINUM-INDUCED CRYSTALLIZATION;
D O I：
10.1016/j.matpr.2022.02.126
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The reported work is focussed on the construction of p-type polycrystalline Silicon (poly-Si) seed layer using a cost-efficient Aluminium Induced Crystallisation procedure. A p-type poly-Si thin film (seed layer) had been fabricated on foreign substrate (quartz). The structural and morphological characterisation of the as-fabricated sample had been done through X-ray diffractometer (XRD), optical microscope (OM) and scanning electron microscope (SEM). Grain formation in the seed layer was confirmed by OM and SEM. The average crystallite size of the as-fabricated thin film was calculated to be 20.77 nm using XRD data with Scherrer equation. Copyright (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 1st International Conference on Physics of Materials and Technology.
引用
收藏
页码：665 / 667
页数：3
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