Resonant tunnelling in double-barrier heterostructures with an accumulation layer

被引：0
作者：
Wosinski, T
Figielski, T
Makosa, A
Wrotek, S
Dobrowolski, W
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Coll Sci, PL-02668 Warsaw, Poland
来源：
ACTA PHYSICA POLONICA A | 1998年 / 94卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.94.617
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
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页码：617 / 621
页数：5
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