Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films

被引：3

作者：

Guan Tong ^{[1
]}

Teng Jing ^{[1
]}

Wu Ke-Hui ^{[1
]}

Li Yong-Qing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

ACTA PHYSICA SINICA | 2015年 / 64卷 / 07期

基金：

中国国家自然科学基金;

关键词：

topological insulators; thin film; linear magnetoresistance; QUANTUM; STATES; BULK;

D O I：

10.7498/aps.64.077201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Linear magnetoresistance (LMR) observed in a topological insulator (Bi0.5Sb0.5)(2)Te-3 thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.

引用

页数：8

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