Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films

被引：3

作者：

Guan Tong ^{[1
]}

Teng Jing ^{[1
]}

Wu Ke-Hui ^{[1
]}

Li Yong-Qing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

ACTA PHYSICA SINICA | 2015年 / 64卷 / 07期

基金：

中国国家自然科学基金;

关键词：

topological insulators; thin film; linear magnetoresistance; QUANTUM; STATES; BULK;

D O I：

10.7498/aps.64.077201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Linear magnetoresistance (LMR) observed in a topological insulator (Bi0.5Sb0.5)(2)Te-3 thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material.

引用

页数：8

共 38 条

[1]

ABRIKOSOV AA, 1969, SOV PHYS JETP-USSR, V29, P746

[2] Quantum magnetoresistance [J].

Abrikosov, AA .

PHYSICAL REVIEW B, 1998, 58 (05) :2788-2794

[3] Linear magnetoresistance in topological insulator thin films: Quantum phase coherence effects at high temperatures [J].

Assaf, B. A. ;

Cardinal, T. ;

Wei, P. ;

Katmis, F. ;

Moodera, J. S. ;

Heiman, D. .

APPLIED PHYSICS LETTERS, 2013, 102 (01)

[4] Electric field control of the LaAlO3/SrTiO3 interface ground state [J].

Caviglia, A. D. ;

Gariglio, S. ;

Reyren, N. ;

Jaccard, D. ;

Schneider, T. ;

Gabay, M. ;

Thiel, S. ;

Hammerl, G. ;

Mannhart, J. ;

Triscone, J. -M. .

NATURE, 2008, 456 (7222) :624-627

[5] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[6] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[7] Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets [J].

Gao, B. F. ;

Gehring, P. ;

Burghard, M. ;

Kern, K. .

APPLIED PHYSICS LETTERS, 2012, 100 (21)

[8] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[9] High-field linear magneto-resistance in topological insulator Bi2Se3 thin films [J].

He, Hongtao ;

Li, Baikui ;

Liu, Hongchao ;

Guo, Xin ;

Wang, Ziyan ;

Xie, Maohai ;

Wang, Jiannong .

APPLIED PHYSICS LETTERS, 2012, 100 (03)

[10] Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films [J].

He, Xiaoyue ;

Guan, Tong ;

Wang, Xiuxia ;

Feng, Baojie ;

Cheng, Peng ;

Chen, Lan ;

Li, Yongqing ;

Wu, Kehui .

APPLIED PHYSICS LETTERS, 2012, 101 (12)

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