Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

被引:8
作者
Bulgakov, Alexander V. [1 ]
Evtushenko, Anton B. [1 ]
Shukhov, Yuri G. [1 ]
Ozerov, Igor [2 ]
Marine, Wladimir [2 ]
机构
[1] Inst Thermophys SB RAS, Lavrentyev Ave 1, Novosibirsk 630090, Russia
[2] Univ Mediterranee, CNRS, CINaM, UPR 3118, F-13288 Marseille, France
来源
INTERNATIONAL SYMPOSIUM ON HIGH POWER LASER ABLATION 2010 | 2010年 / 1278卷
基金
俄罗斯基础研究基金会;
关键词
Laser Ablation; Clusters; Compound Semiconductors; Zinc Oxide; Indium Phosphide; Congruent Vaporization; Laser Plume Expansion; Mass Spectrometry; ZINC-OXIDE NANOCLUSTERS; TIME-OF-FLIGHT; INDIUM-PHOSPHIDE; MASS-SPECTROMETRY; SILICON; ZNO; SPECTROSCOPY; TRANSITION; SURFACE; PLUME;
D O I
10.1063/1.3507174
中图分类号
O59 [应用物理学];
学科分类号
摘要
A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic ZnnOm and InnPm particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n > 9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In4P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.
引用
收藏
页码:78 / +
页数:3
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