Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires

被引：6
作者：
Tsogbadrakh, N. [1 ]
Choi, Eun-Ae [1 ]
Lee, Woo-Jin [1 ]
Chang, K. J. [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
Diluted magnetic semiconductors; ZnO; Nanowire; LSDA plus U; DILUTED MAGNETIC SEMICONDUCTORS; AB-INITIO; BAND-STRUCTURE; THIN-FILMS; MODEL; (ZN; CO;
D O I：
10.1016/j.cap.2010.07.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the magnetic properties of Mn-doped ZnO nanowires (NWs) using the local spin density approximation (LSDA) and the LSDA+U approach, where U represents the on-site Coulomb interaction. In carrier-free (Zn,Mn)O NWs, the majority Mn t(a) states are fully occupied, leading to an antiferromagnetic ground state. We examine the effect of additional p-type doping on the ferromagnetism by considering surface O dangling bonds, Zn vacancies, and N impurities. For all cases, localized hole carriers are generated in the majority t(a) states and promote a ferromagnetic ordering via double exchange interactions, similar to the trend of bulk (Zn,Mn)O. The ferromagnetic coupling tends to increase with increasing of the hole carrier density. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：236 / 240
页数：5
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