Study of Schottky contact between Au and NiO nanowire by conductive atomic force microscopy (C-AFM): The case of surface states

被引:11
作者
Zhang, Yidong [1 ]
机构
[1] Xuchang Univ, Inst Surface Micro & Nano Mat, Key Lab Micronano Mat Energy Storage & Convers He, Xuchang 461000, Peoples R China
关键词
NiO (nickel oxide); Nanowires; Rectify behavior; Current; voltage; I-V CHARACTERISTICS; BUFFER LAYER; PHOTOVOLTAGE;
D O I
10.1016/j.physe.2015.01.029
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, NiO nanowires have been synthesized by a hydrothermal reaction of NiCl2 with Na2C2O4 in the presence of ethylene glycol at 180 degrees C for 12 h, then calcinated at 400 degrees C for 2 h. The NiO nanowires were analyzed by means of scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The resulting current-voltage (I-V) characteristics of the NiO nanowires exhibited a clear rectifying behavior. This rectify behavior was attributed to the formation of a Schottky contact between Au coated atomic force microscopy (AFM) tip and NiO nanowires (nano-M/SC) which was dominated by the surface states in NiO itself. Photo-assisted conductive AFM (PC-AFM) was used to demonstrate how the I-V characteristics are influenced by the surface states. Our I-V results also showed that the nano-M/SCs had a good photoelectric switching effect at reverse bias. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:109 / 114
页数:6
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