Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter

被引：53

作者：

Meng, Binbin ^{[1
]}

Zhang, Feihu ^{[1
]}

Li, Zhipeng ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mechatron Engn, Harbin 150001, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 31卷

基金：

中国国家自然科学基金;

关键词：

6H-SiC; Nanoscratching; HPPT; DBT; Deformation; CRYSTAL SILICON-CARBIDE; DUCTILE MODE; DAMAGE; TRANSFORMATIONS; NANOINDENTATION; INDENTATION; TRANSITION; SIMULATION; SURFACES; SCALE;

D O I：

10.1016/j.mssp.2014.11.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to analyze the deformation characteristics and removal mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching test was conducted on 6H-SiC (0001) by using a Berkovich diamond indenter. The deformation and removal characteristics of 6H-SiC during a nanoscratching process by using a sharp indenter are significantly different from those through a single-point diamond turning (SPDT) method. The characteristics in different regimes of the scratching process like plastic flow and the form of fracture behavior were analyzed. The ductile/brittle transition (DBT) of this material was discussed in detail theoretically and experimentally. X-ray diffraction and a laser micro-Raman spectrometer were used for phase analysis after the scratching process. The results indicate that phase transformation has not occurred during the nanoscratching process of this material. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：160 / 165

页数：6

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