Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

被引：52

作者：

Mori, Takahiro ^{[1
]}

Morita, Yukinori ^{[1
]}

Miyata, Noriyuki ^{[1
]}

Migita, Shinji ^{[1
]}

Fukuda, Koichi ^{[1
]}

Mizubayashi, Wataru ^{[1
]}

Masahara, Meishoku ^{[1
]}

Yasuda, Tetsuji ^{[1
]}

Ota, Hiroyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst NeRI, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 08期

基金：

日本学术振兴会;

关键词：

MODEL;

D O I：

10.1063/1.4913610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs. (C) 2015 AIP Publishing LLC.

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