Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors

We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott's model, which are normally observed in crystalline semiconductors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517502]