Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

被引：79

作者：

Lv, Yuanjie ^{[1
]}

Lin, Zhaojun ^{[1
]}

Zhang, Yu ^{[1
]}

Meng, Lingguo ^{[1
]}

Luan, Chongbiao ^{[1
]}

Cao, Zhifang ^{[1
]}

Chen, Hong ^{[2
]}

Wang, Zhanguo ^{[3
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

基金：

中国国家自然科学基金;

关键词：

2-DIMENSIONAL ELECTRON-GAS; INTERFACIAL LAYER; MOBILITY;

D O I：

10.1063/1.3569138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas (2DEG) electron mobility in both the circular and rectangular AlGaN/AlN/GaN HFETs. Moreover, the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructures is relatively weaker compared to that in AlGaN/GaN heterostructures, which is attributed to the AlN interlayer in AlGaN/AlN/GaN heterostructures to enlarge the average distance between the 2DEG electrons and the polarization charges. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569138]

引用

页数：3

共 11 条

[1] Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03≤x≤0.23) [J].

Gonschorek, M. ;

Carlin, J. -F. ;

Feltin, E. ;

Py, M. A. ;

Grandjean, N. ;

Darakchieva, V. ;

Monemar, B. ;

Lorenz, M. ;

Ramm, G. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)

[2] Dislocation scattering in a two-dimensional electron gas [J].

Jena, D ;

Gossard, AC ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1707-1709

[3] Reduction of current collapse in AlGaN/GaN HFETs using AIN interfacial layer [J].

Lee, JS ;

Kim, JW ;

Lee, JH ;

Kim, CS ;

Oh, JE ;

Shin, MW ;

Lee, JH .

ELECTRONICS LETTERS, 2003, 39 (09) :750-752

[4] The influence of Schottky contact metals on the strain of AlGaN barrier layers [J].

Lin, Zhaojun ;

Zhao, Jianzhi ;

Corrigan, Timothy D. ;

Wang, Zhen ;

You, Zhidong ;

Wang, Zhanguo ;

Lu, Wu .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)

[5] Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures [J].

Lin, ZJ ;

Lu, W .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

[6] Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer [J].

Miyoshi, Makoto ;

Egawa, Takashi ;

Ishikawa, Hiroyasu .

SOLID-STATE ELECTRONICS, 2006, 50 (9-10) :1515-1521

[7] Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions [J].

Polyakov, A. Y. ;

Smirnov, N. B. ;

Govorkov, A. V. ;

Markov, A. V. ;

Yugova, T. G. ;

Dabiran, A. M. ;

Wowchak, A. M. ;

Cui, B. ;

Osinsky, A. V. ;

Chow, P. P. ;

Pearton, S. J. ;

Scherbaichev, K. D. ;

Bublik, V. T. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)

[8] Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures [J].

Polyakov, V. M. ;

Schwierz, F. ;

Cimalla, I. ;

Kittler, M. ;

Luebbers, B. ;

Schober, A. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[9] Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures [J].

Ridley, BK ;

Foutz, BE ;

Eastman, LF .

PHYSICAL REVIEW B, 2000, 61 (24) :16862-16869

[10] AlGaN/AlN/GaN high-power microwave HEMT [J].

Shen, L ;

Heikman, S ;

Moran, B ;

Coffie, R ;

Zhang, NQ ;

Buttari, D ;

Smorchkova, IP ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) :457-459

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