The accuracy of the standard resistivity-concentration conversion practice estimated by measuring the segregation coefficient of boron and phosphorous in Cz-Si

The effective segregation coefficient of boron and phosphorous has been extrapolated from resistivity data collected for a large number of commercial Cz-Si crystals, pulled in similar experimental conditions. A small solidified fraction of the Si melt volume and different initial concentrations of the doping species in the melt have been considered in this study. The dopant concentration in the solid phase has been estimated by converting the resistivity of the Si crystal to the corresponding dopant concentration, according to the standard conversion practice recommended by SEMI. A dependence of the effective segregation coefficient on the initial dopant concentration in the melt has been found experimentally for two specific ranges of concentration. A possible explanation for such dependence, including the effect of the crucible dissolution and the local inaccuracy of the standard resistivity-concentration conversion procedure, is suggested. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim