Plasma oscillations of the two-dimensional electron gas in the field-effect transistor with a cylindrical gate electrode

被引:6
作者
Arsenin, A. V.
Gladun, A. D.
Leiman, V. G.
Semenenko, V. L.
Ryzhii, V. I.
机构
基金
俄罗斯基础研究基金会;
关键词
9;
D O I
10.1134/S1064226910110112
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The frequency characteristics of the two-dimensional electron gas in the field-effect transistor with with a cylindrical gate electrode are obtained in the framework of the linear hydrodynamic model. The effect of the transverse dimension and the position of the gate electrode and the parameters of thetwo-dimensional electron gas layer on the resonance characteristics of the field-effect transistor is analyzed. The practical prospects of the results in the development of nanosized oscillators and detectors of the terahertz electromagnetic radiation are outlined.
引用
收藏
页码:1285 / 1294
页数:10
相关论文
共 50 条
[31]   Carbon nanotube field-effect transistor with a carbon nanotube gate electrode [J].
Park, Ji-Yong .
NANOTECHNOLOGY, 2007, 18 (09)
[32]   Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas [J].
Blom, FAP ;
Peeters, FM ;
vanderZanden, K ;
vanHove, M .
SURFACE SCIENCE, 1996, 361 (1-3) :851-854
[33]   GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas [J].
Shinohara, Keisuke ;
King, Casey ;
Carter, Andrew D. ;
Regan, Eric J. ;
Arias, Andrea ;
Bergman, Joshua ;
Urteaga, Miguel ;
Brar, Berinder .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (03) :417-420
[34]   Observation of different transport behaviors in a two-dimensional MoTe2 field-effect transistor with engineered gate stack [J].
Yang, Yafen ;
Zhu, Xinyi ;
Zhang, Kai ;
Zhu, Hao ;
Chen, Lin ;
Sun, Qingqing .
MICROELECTRONIC ENGINEERING, 2021, 237
[35]   Two-dimensional analytic model for fully depleted surrounding gate metal-oxide-semiconductor field-effect transistor [J].
Liu, Linlin ;
Li, Zunchao ;
You, Yilong ;
Xu, Jinpeng .
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2011, 45 (02) :73-77
[36]   ANALYSIS OF CHARGE CONTROL IN PSEUDOMORPHIC TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].
ANDO, Y ;
ITOH, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2295-2301
[37]   Resonance detection of terahertz radiation in nanometer field-effect transistors with two-dimensional electron gas [J].
Maremyanin, K. V. ;
Gavrilenko, V. I. ;
Morozov, S. V. ;
Ermolaev, D. M. ;
Zemlyakov, V. E. ;
Shapoval, S. Yu. ;
Fateev, D. V. ;
Popov, V. V. ;
Maleev, N. A. ;
Teppe, F. ;
Knap, W. .
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
[38]   BACK-GATED FIELD-EFFECT IN A DOUBLE TWO-DIMENSIONAL ELECTRON-GAS STRUCTURE [J].
SASA, S ;
MUTO, S ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08) :L674-L676
[39]   Nonlinear Hall effect for a two-dimensional electron gas in a cylindrical nanomembrane [J].
Vorobyova, Julia S. ;
Vorob'ev, Alexander B. ;
Prinz, Victor Y. ;
Toropov, Alexander, I .
PHYSICAL REVIEW B, 2018, 98 (16)
[40]   LOCAL PLASMA-OSCILLATIONS IN THE SUPERLATTICE OF A TWO-DIMENSIONAL ELECTRON-GAS [J].
KOSOBUKIN, VA .
FIZIKA TVERDOGO TELA, 1986, 28 (07) :1964-1969