Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga) Se2 solar cells

被引：50

作者：

Vermang, Bart ^{[1
,2
]}

Watjen, Jorn Timo ^{[1
]}

Fjallstrom, Viktor ^{[1
]}

Rostvall, Fredrik ^{[1
]}

Edoff, Marika ^{[1
]}

Gunnarsson, Rickard ^{[3
]}

Pilch, Iris ^{[3
]}

Helmersson, Ulf ^{[3
]}

Kotipalli, Ratan ^{[4
]}

Henry, Frederic ^{[4
]}

Flandre, Denis ^{[4
]}

机构：

[1] Uppsala Univ, Angstrom Solar Ctr, S-75121 Uppsala, Sweden

[2] Univ Leuven, KU Leuven, ESAT, B-3001 Leuven, Belgium

[3] Linkoping Univ, Plasma & Coatings Phys, S-58183 Linkoping, Sweden

[4] Catholic Univ Louvain, ICTEAM IMNC, B-1348 Louvain La Neuve, Belgium

来源：

THIN SOLID FILMS | 2015年 / 582卷

基金：

瑞典研究理事会;

关键词：

Ultra-thin films; Copper Indium Gallium Selenide; Aluminum oxide; Surface passivation layer; Molybdenum; Nanoparticles; Local contacts; Solar cells;

D O I：

10.1016/j.tsf.2014.10.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se-2 (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al2O3 layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm(2); as compared to equivalent CIGS solar cells with a standard back contact. (C) 2014 The Authors. Published by Elsevier B.V.

引用

页码：300 / 303

页数：4

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