Mobility and metal-insulator transition of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells

被引：16

作者：

Gold, A. ^{[1
,2
]}

机构：

[1] CNRS, CEMES, F-31055 Toulouse, France

[2] Univ Toulouse 3, UFR PCA, F-31062 Toulouse, France

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 06期

关键词：

LOCAL-FIELD CORRECTION; PARTICLE RELAXATION-TIME; SCATTERING; TRANSPORT;

D O I：

10.1063/1.3482058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We consider the mobility of the interacting two-dimensional electron gas as realized in SiGe/Si/SiGe quantum wells. For zero temperature we calculate the mobility as function of the electron density for remote charged-impurity scattering and we take into account exchange-correlation effects and multiple-scattering effects. Multiple-scattering effects give rise to a metal-insulator transition at low electron density. Our calculation is in good agreement with experimental results obtained with remote doped SiGe/Si/SiGe quantum wells having electron densities near the metal-insulator transition. We discuss the critical density of the metal-insulator transition as function of the remote doping distance and make some predictions. The single-particle relaxation time and spin-polarization effects are also considered. (C) 2010 American Institute of Physics. [doi:10.1063/1.3482058]

引用

页数：5

共 27 条

[11] The local-field correction for the interacting electron gas: Many-body effects for unpolarized and polarized electrons [J].

Gold, A .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 103 (3-4) :491-500

[12] LOCALIZATION AND SCREENING ANOMALIES IN TWO-DIMENSIONAL SYSTEMS [J].

GOLD, A ;

GOTZE, W .

PHYSICAL REVIEW B, 1986, 33 (04) :2495-2511

[13] ELECTRONIC TRANSPORT-PROPERTIES OF A TWO-DIMENSIONAL ELECTRON-GAS IN A SILICON QUANTUM-WELL STRUCTURE AT LOW-TEMPERATURE [J].

GOLD, A .

PHYSICAL REVIEW B, 1987, 35 (02) :723-733

[14] CORRELATION IN FERMI LIQUIDS - ANALYTICAL RESULTS FOR THE LOCAL-FIELD CORRECTION IN 2 AND 3 DIMENSIONS [J].

GOLD, A ;

CALMELS, L .

PHYSICAL REVIEW B, 1993, 48 (16) :11622-11637

[15] SCATTERING TIME AND SINGLE-PARTICLE RELAXATION-TIME IN A DISORDERED TWO-DIMENSIONAL ELECTRON-GAS [J].

GOLD, A .

PHYSICAL REVIEW B, 1988, 38 (15) :10798-10811

[16] Metal-insulator transition in two-dimensional electron systems [J].

Kravchenko, SV ;

Sarachik, MP .

REPORTS ON PROGRESS IN PHYSICS, 2004, 67 (01) :1-44

[17] Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6x106 cm2/V s [J].

Lu, T. M. ;

Tsui, D. C. ;

Lee, C. -H. ;

Liu, C. W. .

APPLIED PHYSICS LETTERS, 2009, 94 (18)

[18] In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK [J].

Lu, T. M. ;

Sun, L. ;

Tsui, D. C. ;

Lyon, S. ;

Pan, W. ;

Muehlberger, M. ;

Schaeffler, F. ;

Liu, J. ;

Xie, Y. H. .

PHYSICAL REVIEW B, 2008, 78 (23)

[19] Spin polarization and metallic behavior in a silicon two-dimensional electron system [J].

Okamoto, T ;

Ooya, M ;

Hosoya, K ;

Kawaji, S .

PHYSICAL REVIEW B, 2004, 69 (04)

[20] Spin degree of freedom in a two-dimensional electron liquid [J].

Okamoto, T ;

Hosoya, K ;

Kawaji, S ;

Yagi, A .

PHYSICAL REVIEW LETTERS, 1999, 82 (19) :3875-3878

← 1 2 3 →