Mobility and metal-insulator transition of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells

被引：16

作者：

Gold, A. ^{[1
,2
]}

机构：

[1] CNRS, CEMES, F-31055 Toulouse, France

[2] Univ Toulouse 3, UFR PCA, F-31062 Toulouse, France

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 06期

关键词：

LOCAL-FIELD CORRECTION; PARTICLE RELAXATION-TIME; SCATTERING; TRANSPORT;

D O I：

10.1063/1.3482058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We consider the mobility of the interacting two-dimensional electron gas as realized in SiGe/Si/SiGe quantum wells. For zero temperature we calculate the mobility as function of the electron density for remote charged-impurity scattering and we take into account exchange-correlation effects and multiple-scattering effects. Multiple-scattering effects give rise to a metal-insulator transition at low electron density. Our calculation is in good agreement with experimental results obtained with remote doped SiGe/Si/SiGe quantum wells having electron densities near the metal-insulator transition. We discuss the critical density of the metal-insulator transition as function of the remote doping distance and make some predictions. The single-particle relaxation time and spin-polarization effects are also considered. (C) 2010 American Institute of Physics. [doi:10.1063/1.3482058]

引用

页数：5

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