Electrical conduction mechanism in amorphous thin films of the system PbxGe42-xSe58

被引：4
作者：
Rahman, Syed [1 ]
Bale, Shashidhar [1 ]
Kumar, Siva [1 ]
机构：
[1] Osmania Univ, Dept Phys, Hyderabad 500007, Andhra Pradesh, India
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2007年 / 104卷 / 01期
关键词：
glasses; thin films; double stage crystallization; Poole-Frenkel effect; DC electrical conductivity; barrier potentials; SEMICONDUCTING CHALCOGENIDE GLASSES; DOUBLE STAGE CRYSTALLIZATION; GE-SE; ALLOYS; MODEL;
D O I：
10.1016/j.matchemphys.2007.02.101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bulk glasses of composition PbxGe42-xSe58(x=7, 8 and 9) were prepared by melt quench technique. The thermal behaviour of the glass system was investigated by differential scanning calorimetry. The double stage crystallization was observed in these glasses. Amorphous thin films of PbxGe42-xSe58 (x =7,8 and 9) were prepared by thermal evaporation of bulk glasses of the same composition on the glass substrates. Electrical conduction mechanism in PbxGe42-xSe58 thin films in the temperature range of 300-425 K with both symmetric and asymmetric electrodes is reported. The results were interpreted in terms of a Poole-Frenkel type of conduction mechanism over the entire range of temperatures and field strengths. Tunnel characteristics are reported in ultra thin films and the metal semiconductor interface barrier heights are determined. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：153 / 157
页数：5
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