Enhanced figure of merit of a porous thin film of bismuth antimony telluride

被引：93

作者：

Kashiwagi, Makoto ^{[1
,2
]}

Hirata, Shuzo ^{[3
,4
]}

Harada, Kentaro ^{[1
,3
,4
]}

Zheng, Yanqiong ^{[1
,2
]}

Miyazaki, Koji ^{[1
,2
]}

Yahiro, Masayuki ^{[1
,3
,4
,5
]}

Adachi, Chihaya ^{[1
,3
,4
]}

机构：

[1] Life BEANS Ctr Kyushu, BEANS Lab, Nishi Ku, Fukuoka 8190395, Japan

[2] Kyushu Inst Technol, Dept Mech & Control Engn, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan

[3] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Nishi Ku, Fukuoka 8190395, Japan

[4] Kyushu Univ, Ctr Future Chem, Nishi Ku, Fukuoka 8190395, Japan

[5] Inst Syst Informat Technol & Nanotechnol, Nishi Ku, Fukuoka 8140111, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 02期

关键词：

THERMAL-CONDUCTIVITY; THERMOELECTRIC PROPERTIES; FABRICATION;

D O I：

10.1063/1.3543852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A porous thin film of Bi0.4Te3Sb1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi0.4Te3Sb1.6 films to 0.25 W/(m.K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 mu V/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543852]

引用

页数：3

共 27 条

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