Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

We present the first AlGaN/GaN tunnel-junction FETs (TJ-FETs) featuring a metal-2-D-electron-gas (2DEG) Schottky tunnel junction at the source. The control of the source-to-drain current flow is realized through a gate-controlled tunnel junction instead of a gate-controlled 2DEG channel. The TJ-FETs exhibit normally off operation (V-th = +1.35 V) in an otherwise normally on as-grown sample. The unique high-density 2DEG in AlGaN/GaN heterostructures enables the formation of a Schottky tunnel barrier with nanometer-scale barrier thickness even with a large Schottky barrier height (e. g., similar to 0.8 eV). In the OFF state, the source Schottky junction provides natural reverse-blocking capability, resulting in significant leakage reduction and low OFF-state current. A drive current of 326 mA/mm, a high I-ON/I-OFF ratio (10(10)), and a low subthreshold swing (89 mV/dec) are obtained.