In situ Hall effect measurement on diamond anvil cell under high pressure

被引：19

作者：

Hu, Tingjing ^{[1
]}

Cui, Xiaoyan ^{[1
,2
]}

Gao, Yang ^{[1
]}

Han, Yonghao ^{[1
]}

Liu, Cailong ^{[1
]}

Liu, Bao ^{[1
]}

Liu, Hongwu ^{[1
]}

Ma, Yanzhang ^{[3
]}

Gao, Chunxiao ^{[1
]}

机构：

[1] Jilin Univ, Inst Atom & Mol Phys, State Key Lab Superhard Mat, Coll Phys, Changchun 130012, Peoples R China

[2] Jilin Normal Univ, Coll Phys, Siping 136000, Peoples R China

[3] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 11期

基金：

中国国家自然科学基金;

关键词：

II-VI SEMICONDUCTORS; X-RAY-DIFFRACTION; PHASE-TRANSITIONS; ZNTE; RESISTIVITY; DEEP; SPECTROSCOPY; IMPURITIES; SCATTERING; SYSTEM;

D O I：

10.1063/1.3501384

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A method for in situ Hall effect measurement under high pressure was developed on a diamond anvil cell. The electrode was accurately integrated on one diamond anvil with regular shape. A uniform and strong magnetic field was introduced into the sample zone. The voltage errors brought by some negative effects during the measurement were well eliminated. The correction factor of the Hall coefficient, brought by the nonpoint contact between the electrode and the sample, was 4.51%. The measurement error of the magnetic field did not exceed 1%. The carrier character of ZnTe powders was studied up to 23 GPa. The evolution of conductivity with pressure was explained based on the variation of the carrier behavior. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3501384]

引用

页数：4

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