Effect of In on the Properties of AlSb Thin Film Solar Cell

被引：10

作者：

Athab, Rana H. ^{[1
]}

Hussein, Bushra H. ^{[1
]}

Makki, Sameer A. ^{[1
]}

机构：

[1] Univ Baghdad, Dept Phys, Coll Educ Pure Sci Ibn Al Haitham, Baghdad, Iraq

来源：

TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY (TMREES19) | 2019年 / 2123卷

关键词：

P-AlSb:In; thin film; XRD; energy gap; solar cell; OPTICAL-PROPERTIES;

D O I：

10.1063/1.5116957

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

AlSb thin-film solar cell consisting of p-type AlSb was prepared on n-type Si substrate by using thermal evaporation. The effect of the preparation and partial replacement of Aluminum with Indium of the Al1-xInxSb were studied to obtain the best properties. Thin films have been deposited on glass substrate at R.T with ratios (X=0.0, 0.1 and 0.3) under the vacuum of 10(-6) Torr with (150) nm thickness. Structural, optical and electrical properties of the films were investigated, I-V characteristics studies as ratios of Indium increased, measurements indicate formation of good quality thin films of AlSb having band gap within the range reported in the literature.

引用

页数：9

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