Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

被引：82

作者：

Bauer, Benedikt ^{[1
]}

Rudolph, Andreas ^{[1
]}

Soda, Marcello ^{[1
]}

Fontcuberta i Morral, Anna ^{[2
]}

Zweck, Josef ^{[1
]}

Schuh, Dieter ^{[1
]}

Reiger, Elisabeth ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93053 Regensburg, Germany

[2] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 43期

关键词：

ARRAYS;

D O I：

10.1088/0957-4484/21/43/435601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 mu m. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

引用

页数：5

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