Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

被引：15

作者：

Chen, Di ^{[1
]}

Ding, Zhibo ^{[1
]}

Yao, Shude ^{[1
]}

Hua, Wei ^{[1
]}

Wang, Kun ^{[1
]}

Chen, Tianxiang ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, PR, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 12-13期

关键词：

nano-structure; magnetic properties; TEM; ion-implantation;

D O I：

10.1016/j.nimb.2008.03.120

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The n-type GaN film was grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD). Mn+ ions of 75 keV with the fluence of 8 x 10(17)/cm(2) were implanted in the GaN at 350 degrees C. The implanted sample was annealed at 850 degrees C to recrystallize the sample and to remove implantation damage. We investigated the structural and magnetic properties of Mn+ ion-implanted GaN by using Rutherford back-scattering (RBS), high resolution transmission electron microscopy (HRTEM) and superconducting quantum interference device (SQUID). RBS results showed the Mn+ ions were concentrated near the surface. HRTEM results showed nano-clusters structure in the sample. The temperature dependence of magnetization taken in zero-field-cooling and field-cooling conditions with the block temperature was 267 K and hysteresis loops which exhibited a transformation from ferromagnetism to superparamagnetism showed the features of magnetic nano-clusters system. And it could be explained the magnetic property of this film originated from Mn-rich clusters. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2797 / 2800

页数：4

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