Oxidation Behaviour of Ti2AlN Films Composed Mainly of Nanolaminated MAX Phase

被引：13
作者：
Wang, Q. M. [1 ,2 ,3 ]
Garkas, W. [1 ]
Renteria, A. Flores [1 ]
Leyens, C. [1 ,4 ]
Kim, K. H. [3 ]
机构：
[1] Brandenburg Tech Univ Cottbus, Chair Phys Met & Mat Technol, D-03046 Cottbus, Germany
[2] Inst Met Sci & Technol, Div Surface Engn Mat, Shenyang 110016, Peoples R China
[3] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Pusan 609735, South Korea
[4] Tech Univ Dresden, Inst Mat Sci, D-01069 Dresden, Germany
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 10期
基金：
美国国家科学基金会;
关键词：
Ti2AlN; Nanolaminated MAX Phase; Films; Oxidation; MECHANICAL-PROPERTIES; STABILITY; TRANSFORMATION; CORROSION; COATINGS; TI3SIC2;
D O I：
10.1166/jnn.2011.3504
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this paper, we reported tie oxidation behaviour of Ti2AlN films on polycrystalline Al2O3 substrates. The Ti2AlN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N-2 atmosphere and subsequent vacuum annealing at 800 degrees C for 1 h. The Ti2AlN films exhibited excellent oxidation resistance and thermal stability at 600-900 degrees C in air. Very low mass gain was observed. At low temperature (600 degrees C) no oxide crystals were observed on film surface. Blade-like theta-Al2O3 fine crystals formed on film surfaces at 700-800 degrees C. At high temperature (900 degrees C), firstly theta-Al2O3 formed on film surface and then transformed into alpha-Al2O3. At 700-900 degrees C, a continuous Al2O3 layer formed on Ti2AlN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2AlN films was discussed based on the experimental results.
引用
收藏
页码：8959 / 8966
页数：8
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