Summary of research in NEDO Cat-CVD project in Japan

被引：81
作者：
Matsumura, H [1 ]
机构：
[1] Japan Adv Inst Sci & Technol, Tatsunokuchi, Ishikawa 9231292, Japan
来源：
THIN SOLID FILMS | 2001年 / 395卷 / 1-2期
关键词：
catalytic chemical vapor deposition; amorphous silicon; polycrystalline silicon; silicon nitride;
D O I：
10.1016/S0040-6090(01)01198-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reviews the recent progress in the catalytic chemical vapor deposition (Cat-CVD) research project, supported by the New Energy and Industrial Technology Development Organization (NEDO). Based on the results obtained in the project, firstly, the deposition mechanism of Cat-CVD is discussed, together with fundamental issues required for making a deposition apparatus. Secondly, the properties of Cat-CVD Si-based thin films such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si), and silicon nitride (SiNx) films are demonstrated. Finally, the feasibility of such films for device application is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：1 / 11
页数：11
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