Dielectric relaxation study of the ceramic matrix BaBi4Ti4O15:Bi2O3

被引：13

作者：

Almeida, P. M. V. ^{[1
]}

Gozzo, C. B. ^{[2
]}

Thaines, E. H. N. S. ^{[2
]}

Sales, A. J. M. ^{[3
]}

Freitas, R. G. ^{[2
]}

Terezo, A. J. ^{[2
]}

Sombra, A. S. B. ^{[4
]}

Costa, M. M. ^{[2
,5
]}

机构：

[1] Fed Univ Rondonia, Dept Phys Ji Parana RO, BR-78960000 Rondonia, Brazil

[2] Fed Univ Mato Grosso UFMT, Dept Chem, Cuiaba, MT, Brazil

[3] Aveiro Univ, I3N & Phys Dept, Campus Univ Santiago, Aveiro, Portugal

[4] Fed Univ Ceara UFC, Tele Informat Engn Dept DETI, BR-60455760 Fortaleza, Ceara, Brazil

[5] Univ Fed Mato Grosso, LACANM, Inst Phys, BR-78060900 Cuiaba, MT, Brazil

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2018年 / 205卷

关键词：

Impedance spectroscopy; X-ray methods; Dielectric relaxation; Electrical conductivity; RELAXOR BEHAVIOR; TEMPERATURE-COEFFICIENT; DOUBLE PEROVSKITE; PHASE-TRANSITION; FERROELECTRICS; CABI4TI4O15; IMPEDANCE;

D O I：

10.1016/j.matchemphys.2017.10.069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric properties of a BaBi4Ti4O15 ceramic were investigated at data temperature range from 340 to 520 degrees C. The effect of excess bismuth oxide (1-10 wt%) in the ceramics by solid state reaction has been investigated. Rietveld refinement observed increase in the fundamental crystallographic parameter c/a of the 10.8074 up to 10.8900 for BBT, compared to BBT-doped materials. The complex studies of impedance exhibit electrical properties of the material are strongly dependent on temperature. The temperature dependence of the dielectric permittivity showed the presence of a structural phase transition that was observed at near 450 degrees C. The decrease in value of grain and grain boundary resistance with increasing temperature suggests the existence of an increase of the conductivity. The nature of variation of DC conductivity with temperature confirms the Arrhenius behavior of the material. The DC electrical and thermal conductivity of grain and grain boundary have been assessed. (C) 2017 Published by Elsevier B.V.

引用

页码：72 / 83

页数：12

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