Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation technique

被引：1

作者：

Kunoh, Y. ^{[1
]}

Takeuchi, K. ^{[1
]}

Inoshita, K. ^{[1
]}

Ohbo, H. ^{[1
]}

Tokunaga, S. ^{[1
]}

Goto, T. ^{[1
]}

Kunisato, T. ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, Adv Devices Res Ctr, Hirakata, Osaka 5738534, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; MOVPE; laser application; LEDs; LASER LIFT-OFF; PHASE-SEPARATION; WELLS; FILMS;

D O I：

10.1002/pssc.200983576

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have successfully transferred GaN films grown on high crystalline quality GaN substrates onto different substrates, where we have developed a laser lift-off technique with a green laser and an absorption-enhanced InGaN layer as a sacrificial layer (a layer to absorb laser beams). We have also achieved an output power of 13.0 mW at 20 mA with a wavelength of approximately 410 nm and an external quantum efficiency of 21.6 % for light emitting diodes transferred on Si substrates by using this method. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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