Analysis of Variability in Transconductance and Mobility of Nanowire Transistors

被引：1

作者：

Barbosa da Silva, Lucas Mota ^{[1
]}

Pavanello, Marcelo Antonio ^{[1
]}

Casse, Mikael ^{[2
]}

Barraud, Sylvain ^{[2
]}

Vinet, Maud ^{[2
]}

Faynot, Olivier ^{[2
]}

de Souza, Michelly ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

[2] Univ Grenoble Alpes, CEA Leti, MINATEC Campus, F-38054 Grenoble, France

来源：

2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022) | 2022年

基金：

巴西圣保罗研究基金会;

关键词：

Variability; Mobility; Junctionless; Nanowire Transistors; Inversion-mode; INVERSION; JUNCTIONLESS;

D O I：

10.1109/SBMICRO55822.2022.9881023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a comparison between the variability in junctionless nanowire transistors and inversion-mode nanowire transistors, looking at the transconductance, low-field mobility, linear and quadratic mobility degradation coefficients. To extract these parameters, the Y-Function method has been used. The obtained results shows differences in mobility and transconductance matching coefficients, indicating that mobility influence is not the only source of transconductance variation.

引用

页数：4

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