Photovoltaic effect in a wide-area semiconductor-ferroelectric device

被引：30

作者：

Katiyar, R. K. ^{[1
,2
]}

Kumar, A. ^{[1
,2
]}

Morell, G. ^{[1
,2
]}

Scott, J. F. ^{[1
,2
,3
]}

Katiyar, R. S. ^{[1
,2
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

[2] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA

[3] Univ Cambridge, Dept Phys, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 09期

基金：

美国国家科学基金会;

关键词：

THIN-FILM; CERAMICS; BIFEO3;

D O I：

10.1063/1.3628318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Millimeter-diameter planar devices of glass/ZnO:Al/BiFeO(3)/La(0.67)Sr(0.33)CoO(3) (LSCO) heterostructures were fabricated by pulsed laser deposition (PLD) techniques. Diode-like behavior with high short-circuit current (SSC similar to 4 mA/cm(2)) and open-circuit voltage (OCV similar to 0.22 V) was obtained under the illumination of about 1% of maximum solar energy. Impedance spectroscopy revealed that electrode/dielectric interface and grain-boundary conduction are mainly responsible for the photo-current. Electrode/dielectric interface, grain boundary impedance, and low-frequency ac conductivity change by almost three orders of magnitude under weak light. Relaxation time of the photo-carriers changes from 80 ms to 96 mu s suggesting that with optimal collecting instruments, one should expect currents several orders higher. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3628318]

引用

页数：3

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