Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs

We present in this work the effects of the rapid thermal annealing on the optical properties of InGaAsN single quantum wells grown on two different kind of misoriented GaAs (111)B substrates: 10 toward [-211] and 2 degrees toward [2-1-1]. An increase of more than one order of magnitude of the photoluminescence emission is shown, as well as a shift towards higher energies of peak emission of the quantum well. This blueshift was found to be greater for the samples grown on the 2 degrees misoriented substrates than for the first inisorientation. These samples were grown by molecular beam epitaKy simultaneously, to assure tha same growth conditions for both samples. Different annealing temperatures were used to find the optimum optical properties for the InGaAsN quantum wells on GaAs (111)B. A comparison of the electrical characteristics of p-i-n diodes processed using as grown and annealed samples is presented. Finally, the application of the RTA optimization to InGaAsN laser devices grown on GaAs (111)B is presented.