Effects of Drying Temperature and Molar Concentration on Structural, Optical, and Electrical Properties of β-Ga2O3 Thin Films Fabricated by Sol-Gel Method

被引:19
作者
Park, Taejun [1 ]
Kim, Kyunghwan [1 ]
Hong, Jeongsoo [1 ]
机构
[1] Gachon Univ, Dept Elect Engn, 1342 Seongnamdaero, Seongnam 13120, Gyeonggi, South Korea
关键词
beta-Ga2O3; sol-gel; film; solution process; semiconductor; PHYSICAL-PROPERTIES; GA2O3; CONDUCTIVITY; PERFORMANCE; MORPHOLOGY; THICKNESS; BEHAVIOR; LIGHT;
D O I
10.3390/coatings11111391
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, beta-Ga2O3 films were fabricated on a quartz substrate by the sol-gel method using different drying temperatures and solutions of different molar concentrations, and their structural, optical, and electrical properties were evaluated. The as-fabricated films exhibited a monoclinic beta-Ga2O3 crystal structure, whose crystallinity and crystallite size increased with increasing molar concentration of the solutions used and increasing drying temperature. Scanning electron microscopy of the as-prepared samples revealed dense surface morphologies and that the thickness of the films also depended on the deposition conditions. The average transmittance of all the samples was above 8% in visible light, and the calculated optical bandgap energy was 4.9 eV. The resistivity measured using a 4-point probe system was 3.7 x 10(3) & OHM; cm.
引用
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页数:10
相关论文
共 45 条
[1]   Physical properties of ZnO thin films deposited by spray pyrolysis technique [J].
Ashour, A. ;
Kaid, M. A. ;
El-Sayed, N. Z. ;
Ibrahim, A. A. .
APPLIED SURFACE SCIENCE, 2006, 252 (22) :7844-7848
[2]   POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].
BALIGA, BJ .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457
[3]   Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films [J].
Bouderbala, M. ;
Hamzaoui, S. ;
Amrani, B. ;
Reshak, Ali H. ;
Adnane, M. ;
Sahraoui, T. ;
Zerdali, M. .
PHYSICA B-CONDENSED MATTER, 2008, 403 (18) :3326-3330
[4]   Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method [J].
Chen, Dazheng ;
Xu, Yu ;
An, Zhiyuan ;
Li, Zhe ;
Zhang, Chunfu .
MICRO & NANO LETTERS, 2019, 14 (10) :1052-1055
[5]   Thickness Dependence of Optical Transmittance of Transparent Wood: Chemical Modification Effects [J].
Chen, Hui ;
Baitenov, Adil ;
Li, Yuanyuan ;
Vasileva, Elena ;
Popov, Sergei ;
Sychugov, Ilya ;
Yan, Max ;
Berglund, Lars .
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (38) :35451-35457
[6]  
Cullity B.D., 1956, ELEMENTS XRAY DIFFRA
[7]   EFFECTS OF CRYSTALLITE SIZE IN PBTIO3 THIN-FILMS [J].
DEKEIJSER, M ;
DORMANS, GJM ;
VANVELDHOVEN, PJ ;
DELEEUW, DM .
APPLIED PHYSICS LETTERS, 1991, 59 (27) :3556-3558
[8]  
Dhaouadi M., 2018, American Journal of Physics and Applications, V6, P43
[9]   Growth characteristics and device properties of MOD derived β-Ga2O3 films [J].
Guo, Pei ;
Xiong, Jie ;
Zhao, Xiaohui ;
Sheng, Tuo ;
Yue, Chao ;
Tao, Bowan ;
Liu, Xingzhao .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (08) :3629-3632
[10]   Guest Editorial: The dawn of gallium oxide microelectronics [J].
Higashiwaki, Masataka ;
Jessen, Gregg H. .
APPLIED PHYSICS LETTERS, 2018, 112 (06)