Electro-optical modulation and photoinduced absorption effects on a CMOS-compatible α-Si:H/α-SiCN multistack waveguide

被引：0

作者：

Rao, Sandro ^{[1
]}

Della Corte, Francesco G. ^{[1
]}

机构：

[1] Mediterranea Univ, Dept Informat Sci Math Elect & Transportat DIMET, I-89131 Reggio Di Calabria, Italy

来源：

MELECON 2010: THE 15TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE | 2010年

关键词：

D O I：

10.1109/MELCON.2010.5476363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report results on a field-effect induced light modulation at lambda = 1.55 mu m in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (alpha-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped alpha-Si: H layers. The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (alpha-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state.

引用

页码：1135 / 1141

页数：7

共 22 条

[1]

[Anonymous], RSOFT PHOT CAD LAYOU

[2] Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration [J].

Barrios, CA ;

Lipson, M .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) :6008-6015

[3] Electrooptic modulation of multisilicon-on-insulator photonic wires [J].

Barrios, Carlos Angulo .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (05) :2146-2155

[4]

CANCELLIERI G, 1984, MEASUREMENTS OPTICAL

[5] Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics [J].

Cocorullo, G ;

Della Corte, FG ;

De Rosa, R ;

Rendina, I ;

Rubino, A ;

Terzi, E .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (06) :997-1002

[6] Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition [J].

Cocorullo, G ;

DellaCorte, FG ;

Rendina, I ;

Minarini, C ;

Rubino, A ;

Terzini, E .

OPTICS LETTERS, 1996, 21 (24) :2002-2004

[7] Simulation study and realisation of an a-Si:H emitter on GaAs [J].

Della Corte, FG ;

Rubino, A ;

Cocorullo, G .

SOLID-STATE ELECTRONICS, 1998, 42 (10) :1819-1825

[8] Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks [J].

Della Corte, Francesco G. ;

Rao, Sandro ;

Nigro, Maria A. ;

Suriano, Francesco ;

Summonte, Caterina .

OPTICS EXPRESS, 2008, 16 (10) :7540-7550

[9] THE PROPERTIES OF FREE-CARRIERS IN AMORPHOUS-SILICON [J].

FAUCHET, PM ;

HULIN, D ;

VANDERHAGHEN, R ;

MOURCHID, A ;

NIGHAN, WL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 141 (1-3) :76-87

[10] Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon [J].

Gusev, OB ;

Kuznetsov, AN ;

Terukov, EI ;

Bresler, MS ;

Kudoyarova, VK ;

Yassievich, IN ;

Zakharchenya, BP ;

Fuhs, W .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :240-242

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