Embedded DRAM: Technology platform for the blue Gene/L chip

被引:45
作者
Iyer, SS
Barth, JE
Parries, PC
Norum, JP
Rice, JP
Logan, LR
Hoyniak, D
机构
[1] IBM Corp, Syst & Technol Grp, Fishkill, NY 12533 USA
[2] IBM Corp, Syst & Technol Grp, Essex Junct Dev Lab, Essex Jct, VT 05452 USA
关键词
D O I
10.1147/rd.492.0333
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The Blue Gene((R))/L chip is a technological tour deforce that embodies the system-on-a-chip concept in its entirety. This paper outlines the salient features of this 130-nm complementary metal oxide semiconductor (CMOS) technology, including the IBM unique embedded dynamic random access memory (DRAM) technology. Crucial to the execution of Blue Gene/L is the simultaneous instantiation of multiple PowerPCO cores, high-performance static random access memory (SRAM), DRAM, and several other logic design blocks on a single-platform technology. The IBM embedded DRAM platform allows this seamless integration without compromising performance, reliability, or yield. We discuss the process architecture, the key parameters of the logic components used in the processor cores and other logic design blocks, the SRAM features used in the L2 cache, and the embedded DRAM that forms the L3 cache. We also discuss the evolution of embedded DRAM technology into a higher-performance space in the 90-nm and 65-nm nodes and the potential for dynamic memory to improve overall memory subsystem performance.
引用
收藏
页码:333 / 350
页数:18
相关论文
共 25 条
[1]   A 600MHZ DSP with 24Mb embedded DRAM with an enhanced instruction set for wireless communication [J].
Adelman, Y ;
Agur, D ;
Bennun, T ;
Chalak, O ;
Greenfield, Z ;
Holzer, R ;
Jalfon, M ;
Kadry, A ;
Kraus, E ;
Lange, F ;
Meirov, H ;
Olofsson, A ;
Raikhman, O ;
Treves, D ;
Zur, S ;
Talmudi, R .
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :418-419
[2]   THE EVOLUTION OF IBM CMOS DRAM TECHNOLOGY [J].
ADLER, E ;
DEBROSSE, JK ;
GEISSLER, SF ;
HOLMES, SJ ;
JAFFE, MD ;
JOHNSON, JB ;
KOBURGER, CW ;
LASKY, JB ;
LLOYD, B ;
MILES, GL ;
NAKOS, JS ;
NOBLE, WP ;
VOLDMAN, SH ;
ARMACOST, M ;
FERGUSON, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (1-2) :167-188
[3]   On-chip versus off-chip test: An artificial dichotomy [J].
Aitken, RC .
INTERNATIONAL TEST CONFERENCE 1998, PROCEEDINGS, 1998, :1146-1146
[4]  
BARTH J, 2002, P IEEE INT SOL STAT, V1, P156
[5]  
BULA O, 2001, P 20 ANN BACUS S PHO, P601
[6]   Integration of trench DRAM into a high-performance 0.18 μm logic technology with copper BEOL [J].
Crowder, S ;
Hannon, R ;
Ho, H ;
Sinitsky, D ;
Wu, S ;
Winstel, K ;
Khan, B ;
Stiffler, SR ;
Iyer, SS .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :1017-1020
[7]   Processor-based built-in self-test for embedded DRAM [J].
Dreibelbis, J ;
Barth, J ;
Kalter, H ;
Kho, R .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (11) :1731-1740
[8]  
DREIBELBIS J, 1997, P IEEE N ATL TEST WO, P19
[9]  
EICHELBERGER EB, 1978, J DES AUTOM FAULT, V2, P165
[10]   A 1MB, 100MHz integrated L2 cache memory with 128b interface and ECC protection [J].
Giacalone, G ;
Busch, R ;
Creed, F ;
Davidovich, A ;
Divakaruni, S ;
Drake, C ;
Ematrudo, C ;
Fifield, J ;
Hodges, R ;
Howell, W ;
Jenkins, P ;
Kozyrczak, M ;
Miller, C ;
Obremski, T ;
Reed, C ;
Rohrbaugh, G ;
Vincent, M ;
vonReyn, T ;
Zimmerman, J .
1996 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 1996, 39 :370-371