High-resolution near-field spectroscopy of InAs single quantum dots at 70 K

被引:9
作者
Yu, YJ [1 ]
Jhe, W
Arakawa, Y
机构
[1] Seoul Natl Univ, Ctr Near Field Atom Photon Technol, Seoul 151742, South Korea
[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan
关键词
D O I
10.1063/1.1618949
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have performed high-resolution near-field laser spectroscopy and microscopy of single InAs/GaAs quantum dots near liquid nitrogen temperature. By simultaneous use of 100-nm shadow mask apertures and a 30-nm-aperture fiber probe, we have achieved photoluminescence (PL) resolution comparable to that available at liquid helium temperature. In particular, we have obtained a PL linewidth of 0.6 meV for single exciton states, and observed biexciton states with quadratic power dependence. (C) 2003 American Institute of Physics.
引用
收藏
页码:3024 / 3026
页数:3
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