Gate-tuned high frequency response of carbon nanotube josephson junctions

被引:24
作者
Cleuziou, J.-P.
Wernsdorfer, W.
Andergassen, S.
Florens, S.
Bouchiat, V.
Ondarcuhu, Th.
Monthioux, M.
机构
[1] Univ Toulouse 1, CNRS, CEMES, F-31055 Toulouse 4, France
[2] CNRS, Inst Neel, UJF, F-38042 Grenoble, France
关键词
D O I
10.1103/PhysRevLett.99.117001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Carbon nanotube Josephson junctions in the open quantum dot limit are fabricated using Pd/Al bilayer electrodes, and exhibit gate-controlled superconducting switching currents. Shapiro voltage steps can be observed under radio frequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard resistively and capacitively shunted junction model showing that the switching currents from the superconducting to the normal state are close to the critical current of the junction. The effective dynamical capacitance of the nanotube junction is found to be strongly gate dependent, suggesting a diffusive contact of the nanotube.
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页数:4
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