High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

被引：65

作者：

Foerst, Michael ^{[1
]}

Niehusmann, Jan

Ploetzing, Tobias

Bolten, Jens

Wahlbrink, Thorsten

Moormann, Christian

Kurz, Heinrich

机构：

[1] Rhein Westfal TH Aachen Klinikum, Inst Halbleitertech, D-52074 Aachen, Germany

[2] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

来源：

OPTICS LETTERS | 2007年 / 32卷 / 14期

关键词：

D O I：

10.1364/OL.32.002046

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate high-speed all-optical switching via vertical excitation of an electron-hole plasma in an oxygen-ion implanted silicon-on-insulator microring resonator. Based on the plasma dispersion effect the spectral response of the device is rapidly modulated by photoinjection and subsequent: recombination of charge carriers at artificially introduced fast recombination centers. At an implantation dose of 1 x 10(12) cm(-2) the carrier lifetime is reduced to 55 ps, which facilitates optical switching of signal light in the 1.55 mu m wavelength range at modulation speeds larger than 5 Gbits/s. (C) 2007 Optical Society of America.

引用

页码：2046 / 2048

页数：3

共 14 条

[1] All-optical control of light on a silicon chip [J].

Almeida, VR ;

Barrios, CA ;

Panepucci, RR ;

Lipson, M .

NATURE, 2004, 431 (7012) :1081-1084

[2] All-optical switching on a silicon chip [J].

Almeida, VR ;

Barrios, CA ;

Panepucci, RR ;

Lipson, M ;

Foster, MA ;

Ouzounov, DG ;

Gaeta, AL .

OPTICS LETTERS, 2004, 29 (24) :2867-2869

[3]

[Anonymous], SPRINGER SERIES OPTI

[4] Influence of nonlinear absorption on Raman amplification in Silicon waveguides [J].

Claps, R ;

Raghunathan, V ;

Dimitropoulos, D ;

Jalali, B .

OPTICS EXPRESS, 2004, 12 (12) :2774-2780

[5] Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides [J].

Dimitropoulos, D ;

Jhaveri, R ;

Claps, R ;

Woo, JCS ;

Jalali, B .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[6] CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE [J].

DOANY, FE ;

GRISCHKOWSKY, D ;

CHI, CC .

APPLIED PHYSICS LETTERS, 1987, 50 (08) :460-462

[7] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[8] Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides [J].

Liu, Y ;

Tsang, HK .

OPTICS LETTERS, 2006, 31 (11) :1714-1716

[9] Ultrahigh-quality-factor silicon-on-insulator microring resonator [J].

Niehusmann, J ;

Vörckel, A ;

Bolivar, PH ;

Wahbink, T ;

Henschel, W ;

Kurz, H .

OPTICS LETTERS, 2004, 29 (24) :2861-2863

[10] Ultrafast all-optical modulation on a silicon chip [J].

Preble, SR ;

Xu, QF ;

Schmidt, BS ;

Lipson, M .

OPTICS LETTERS, 2005, 30 (21) :2891-2893

← 1 2 →