Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer

被引:1
作者
Lee, S
Lee, S
Jeon, D [1 ]
Lee, KR
Ju, BK
Oh, MH
机构
[1] Myong Ji Univ, Dept Phys, Seoul 449728, South Korea
[2] Korea Inst Sci & Technol, Seoul 130010, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期
关键词
D O I
10.1116/1.589983
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Coating silicon field emitter tips with a thin film of diamondlike carbon (DLC) seems to be a promising way to improve the performance of the silicon emitter tips. If one deposits a DLC film directly onto the gated silicon emitter, DLC will contaminate the side wall of the insulating layer, which can cause a large leakage current to the gate. To prevent the contamination of the side wall, we deposited an aluminum sacrificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current. (C) 1998 American Vacuum Society.
引用
收藏
页码:1203 / 1206
页数:4
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