130 nm node mask development

被引：0

作者：

Chabala, JM ^{[1
]}

Weaver, S ^{[1
]}

Alexander, D ^{[1
]}

Lu, MY ^{[1
]}

Kim, NW ^{[1
]}

Cole, D ^{[1
]}

机构：

[1] Etec Syst Inc, Hayward, CA 94545 USA

来源：

17TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS | 2001年 / 4349卷

关键词：

electron beam; photomask; multipass gray; MPG; MPG-II; GHOST; CD uniformity;

D O I：

10.1117/12.425102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. The research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). These results are instructive for improved 130 nm node lithography and 180 nm node productivity.

引用

页码：42 / 50

页数：9

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