Alternating-current light emitting diodes with a diode bridge circuitry

被引：27

作者：

Cho, Jaehee ^{[1
]}

Jung, Jaewook ^{[1
]}

Chae, Jung Hye ^{[1
]}

Kim, Hyungkun ^{[1
]}

Kim, Hyunsoo ^{[1
]}

Lee, Jeong Wook ^{[1
]}

Yoon, Sukho ^{[1
]}

Sone, Cheolsoo ^{[1
]}

Jang, Taehoon ^{[1
]}

Park, Yongjo ^{[1
]}

Yoon, Euijoon ^{[2
,3
]}

机构：

[1] Samsung Adv Inst Technol, Displays Device & Mat Lab, Suwon 440600, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 15172, South Korea

[3] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 15172, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 45-49期

关键词：

light emitting diode; alternating current; gallium nitride;

D O I：

10.1143/JJAP.46.L1194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Most solid-state light emitting devices operate under direct current (DC) condition now. We report the alternating current (AC) light emitting devices fabricated with a diode bridge circuitry which is also made of light emitting diodes (LEDs). The LED bridge circuitry which is flipped on a silicon submount is composed of 4 branches with 7 LED chips and participates as a light emitting component as well. The AC LED can be operated with radiant flux of 0.83 W at an electric power of 8.5 W. This concept could be applied to fabricate compact and economical AC LEDs for a solid-state illumination.

引用

页码：L1194 / L1196

页数：3

共 7 条

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